We prepared poly-crystalline NiO/indium tin oxide (ITO) heterojunction structure using magnetron sputtering at low temperature (<350 degrees C) for application to resistance switching memory devices. The NiO/ITO cell showed typical bipolar resistance switching properties similar to those observed in metal/oxide junctions. The switching current decreased as the cell area was reduced. Multi-level resistance states were observed as the maximum applied voltage was varied. The cell could be switched repeatedly for more than 100 cycles. The clockwise switching behavior is attributed to the junction property change due to the field-induced drift of oxygen vacancies in ITO layer and/or oxygen ions in NiO layer. (C) 2011 Elsevier B.V. All rights reserved.