CNTs were grown on a silicon substrate using the RAP process and PECVD system. The resulting CNT emitters showed the excellent field emission characteristics. For low-voltage driving field emitter fabrication, the CNTs were connected to the drain part of an external MOSFET. A low gate voltage of the MOSFET can control the field emission current of CNTs, instead of a high anode voltage. The emission current of CNTs controlled by the MOSFET was very stable in terms of both the current switching and the current stability of 100 h. (C) 2011 Published by Elsevier B.V.