The dielectric properties of Cu/nano-SnO2 thick film/Cu arrangement were studied by means of complex impedance spectroscopy and frequency dependence of capacitance measured from the impedance data at a range of frequency intervals between 1 Hz and 1 MHz with a voltage between 0 and 2 V. The frequency dependence of the dielectric constant epsilon', dielectric loss epsilon '', loss tangent (tan delta), electric modulus M' and M '' and AC electrical conductivity (sigma(ac)) of the sandwich arrangement was subsequently investigated. Experimental results revealed that the aforementioned parameters have strong frequency dependence. The obtained values of epsilon', epsilon '' showed increments with decreasing frequency. However, increasing frequency levels cause an increase in the AC electrical conductivity (sigma), real and imaginary part of electric modulus. In addition to this, in order to gain an insight into the electric nature of Cu/nano-SnO2 thick film/Cu arrangement device, the Cole-Cole diagrams of the electric modulus were investigated at different voltages. (C) 2011 Elsevier B.V. All rights reserved.