The processes of stimulated gas release and gas blister growth were investigated at the interface of 100 nm thick silver films on glass substrates after irradiation by hydrogen ions of 1 MeV energy to fluences of 1 x 10(13) - 1 x 10(15) ion cm(-2). An interference microscope was used to examine the gas blisters and to measure the blister parameters. The relationship of these processes to the adhesion of a thin film system was established. A method to determine the adhesion and to compute the adhesion characteristics in the film-substrate system is described. The calculated energy of the detachment ranges between 0.06 and 28 J m(-2). Based on the results of this study, a series of practical approaches are proposed to measure the adhesion of thin films to substrates with the method of stimulated gas release.