| 초록 |
Non-saturated atomic layer deposition (ALD) was investigated to achieve composition adjustment in multi-component thin films. This method controlled the composition using variations in the precursor injection time rather than variation in the cycle ratios. An adsorption rate constant was introduced to evaluate precursor adsorption with time. The composition in non-saturated ALD was calculated using an ALD film growth model with experimentally extracted parameters. This method was applied to Al2O3-HfO2 thin films for validation. As a result, Al2O3-HfO2 thin film was successfully deposited as a nano-mixed structure using non-saturated ALD despite a large compositional difference. |
