| 초록 |
The hole injection characteristics play an important role in the electroluminescence performance of quantum-dot light-emitting diodes (QLEDs). By doping Li (5, 10, 15 mol%) into vanadium oxide (V2O5), we demonstrated a low temperature, solution processable hole injection material with improved electrical properties. The effective hole injection characteristic of hole injection layer was confirmed by fabricating hole-only-devices. As a result, QLED using Li-doped V2O5 (10 mol%) showed higher luminance and current efficiency than device with pristine V2O5. Li doping had the effect of improving hole injection property. These results imply the feasibility of a high-performance QLEDs with Li-doped V2O5 as the hole injection layer. |
