| 초록 |
We demonstrate the enhanced performance of all solution-processed quantum-dot light emitting diodes (QLEDs) with an inorganic hole injection layer (HIL). The structure of QLED device is ITO/V2O5/TFB/QDs/ZnO/Al. We used inorganic vanadium oxide (V2O5) as HIL, which is expected to be used as a hole injection path called gap state. Moreover, by using zinc oxide (ZnO) as an electron transport layer (ETL), we can improve the electron injection effectively. The enhanced optoelectronic performance is achieved by the proper alignment of energy-band levels, contributing to control the charge injection. With this effort, the maximum luminance and current efficiency were measured as 53,313 cd/m2 and 4.68 cd/A, respectively. These results show that our QLED device performances have been comparable to that of organic LEDs, which enhance the charge balance. |
