| 초록 |
A simple, direct synthesis method was used to grow carbon-coated SiC nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided environment to synthesize crystalline SiC nanowires coated with carbon sheath in the growth temperature of 1000-1100℃. The main crystal growth direction of carbon-coated SiC nanowires was [111]. The cubic β-SiC nanowires were 20-50 nm in diameter and the thickness of carbon sheath was 2-3 nm. The field emission properties of the synthesized carbon-coated SiC nanowires directly grown from Si substrate were also reported. The turn on field at the emission current density of 10μA/cm2 was about 4.2 V/μm and it showed uniform emission image. |
