| 초록 |
A new top-down semiconductor band gap control technique that can produce various band gaps in materials composed of a small amount of Sn and a large amount of O is introduced. Flame chemical vapour deposition (FCVD) takes advantage of the capillary phenomenon of liquid Sn migrating from amorphous SnOx to pre-formed Au/Sn/O heterostructures. Due to the difference in the degree of capillary phenomenon that frequently occurs at the nanoscale, this technique is overwhelmed in terms of process complexity, cost, time, environment, and efficiency. FCVD alleviates various phenomena that hindered previous methods for controlling the semiconductor band gap, and there is no need to consider the different intrinsic properties of the component materials. To verify these results, the gradual morphological, crystallographic, compositional, and optical changes in the material according to the degree of FCVD processing are sequentially presented. |
