| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Thickness Modulated and Large Area Synthesis of WS2 Based on Chemical Vapor Deposition |
| 초록 | Atomically thin two dimensional (2D) transition metal disulfides (TMDs) MS2 (M=Mo, W) has fascinating electronic and optical properties including indirect-to-direct bandgap transition with reducing number of layers, high carrier mobility and strong spin-orbit coupling due to their broken inversion symmetry which inspire numerous scientific interests. Based on this, 2D TMDs nanosheets have been synthesized of several methods: mechanical and chemical exfoliation, sulfurization of Mo thin film, chemical vapor deposition (CVD) with MO3 (M=Mo, W) and sulfur powder and annealing (NH4)2MoS4 thin films. However, these synthesis methods have various limitations in thickness controllability and large area uniformity. Thus, synthesis method for thickness modulation and large area 2D TMDs nanosheets is necessary for device development. Here we report the synthesis of WS2 nanosheets on the SiO2 substrate using chemical vapor deposition methods with WCl6 and H2S. We systematically modulated the thickness of WS2 from mono- to few-layer dependent on reacion time. WS2 film showed large area uniformityt over 6 cm scale. Furthermore, we fabricated field effect transistor using WS2/graphene hetero-structure as the channel material to evaluate the photoresponsivity. |
| 저자 | 김영준, 송정규, 박주상, 김형준 |
| 소속 | 연세대 |
| 키워드 | WS2; CVD; Thickness Modulation |
