초록 |
Graphene opened the new way for substitution of Si based application, but graphene has a lack in limited properties for using the application. Beyond the graphene, 2D transition metal disulfides (TMDSs) nanosheets have attracted great attention to complementing graphene such as zero band gap in recent few years. 2D TMDSs nanosheets have shown exotic electronic and optical properties: Indirect-to-direct bandgap transition with reducing number of layers, high carrier mobility and strong spin-orbit coupling due to their broken inversion symmetry. Despite of their remarkable properties, however, the studies on the synthesis of 2D TMDSs nanosheets are still showing various limitations in layer controllability, large area uniformity. Thus, the focus of our research is to understand and control the growth of 2D TMDSs nanosheets based on atomic layer deposition (ALD) and to apply to electronic and optical devices. In this talk, I will present the synthesis of MoS2, WS2 and Mo(1-x)WxS2 alloy nanosheets using ALD process which can synthesize the 2D TMDSs nanosheets with thickness controllability and large area uniformity, and electronic and optical properties of synthesized 2D TMDSs nanosheets. Furthermore, potential applications of synthesized 2D TMDSs nanosheets will be introduced. |