| 초록 |
Two-dimensional (2D) materials have emerged as attractive and interesting materials for photoelectrochemical (PEC) because of their particular layer structure, great electric transportation property and strong interaction with sunlight. Nevertheless, 2D SnS2 nanosheets vertically grown on high quality conductive substrate such as graphene electrodes have still not been rarely reported because high growth temperature of SnS2 based on chemical vapor deposition (CVD). In this work, we report vertical 2D SnS2 nanosheets with controllable growth on conductive substrates (ITO) and graphene by a facile and low temperature CVD method. Vertical SnS2 nanosheets was successfully deposited on ITO and graphene at low temperature of 230°C and carrier gas flow rates were adjusted to optimize growth conditions. Moreover, the SnS2 nanosheet structure dependency of the PEC performance was systematically studied. The optimized PEC reactivity of SnS2 nanosheets was achieved at SnCl4:H2S=125:75 SCCM ratio, and heterojunction of graphene/SnS2 was further enhanced the PEC performance due to significantly improved charge transfer properties. This result of controllable vertical SnS2 growth at low temperature suggests a various approach towards the design and fabrication of efficient PEC photoelectrode based on 2D metal chalcogenides. |
