| 초록 |
Porous silicon films were prepared by an electrochemical etch of n-type silicon in an ethanolic solution of hydrofluoric acid. Photoluminescence of porous silicon was investigated by controlling of an etching time and applied current densities from 50 sec. to 900 sec. and from 50 mA/cm2 to 800 mA/cm2, respectively.This photoluminescence efficiency start to decrease, after it reach to the maximum efficiency with further etching time. Porous silicon sample shown the best photoluminescence efficiency was prepared with 200 mA/cm2 of applied current density and with 300 sec of etching time. -This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education, Science and Technology(grant number). |
