| 초록 |
Poly vinylidene fluoride-co-trifluoroethylene(PVDF-TrFE) has been well known as ferroelectric material for organic non-volatile memory applications. Among ferroelectric memory devices, ferroelectric field effect transistors(FeFET) have been of great attention because of nondestructive readout and large scale integration. Since, PVDF-TrFE used as gate dielectric in FeFET has high coercive voltage, it is essential to reduce the thickness of PVDF-TrFE layer. However, reducing film thickness induces high gate leakage result in high off current state in FeFET. Here in, we control some factors such as top electrode, addition of crosslinking agent(THDA)and electrical shocking to lower leakage at ultrathin film. For example, we observed fully saturated hysteresis loops at low coercive voltage(3V) when we used Au as top electrodes in MFM structure with 50nm ferroelectric dielectric layer. |
