| 학회 |
한국공업화학회 |
| 학술대회 |
2020년 가을 (10/28 ~ 10/30, 광주 김대중컨벤션센터(Kimdaejung Convention Center)) |
| 권호 |
24권 1호 |
| 발표분야 |
포스터-디스플레이 |
| 제목 |
Effect of inserting Al2O3 layer using atomic layer deposition for quantum-dot light-emitting diodes |
| 초록 |
We tested the Al2O3 layer deposited by atomic layer deposition (ALD) using O2* plasma to insulating & electron blocking layer for charge balance in quantum-dot (QD) light-emitting diodes (QLEDs). On the one hand, the O2* plasma can reduce the oxygen vacancy of ZnO so that can decrease the exciton quenching phenomenon. It led to excellent device performance and maximum luminance was 56,108 cd/m2, when 1nm Al2O3 layer was deposited. On the other hand, when ALD process was conducted next to the QDs layer, the device performance was degraded because of shorten ligand for QDs. In order to prevent the degradation, the solution process for Al2O3 deposition should be conducted next to the QDs layer. Thus, maximum luminance was increased by 138% (from 15,844 cd/m2 to 21,503 cd/m2). The results show a suitable method of Al2O3 insulating layer deposition should be selected depending on device structures. |
| 저자 |
허수빈, 유종훈, 신재승, 김태연, 김병석, 전우진, 강성준
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| 소속 |
경희대 |
| 키워드 |
aluminium oxide; insulating layer; quantum dot; QLED; ALD
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| E-Mail |
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