| 학회 |
한국공업화학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 |
25권 1호 |
| 발표분야 |
포스터-디스플레이 |
| 제목 |
UV-visible detection characteristics of ZnO phototransistor via Li doping |
| 초록 |
Zinc oxide (ZnO) was widely used as an active layer of ultraviolet (UV)-phototransistors or as a channel layer of visible-light-phototransistor by forming heterostructure. Here, we fabricated solution processed visible-light ZnO phototransistor via Li doping. The oxygen vacancy states, which absorb visible light to generate a photoexcited charge carriers in ZnO, increased with Li concentration from 0 to 5 mol%. In addition, interstitial Li contributes to an increase in the electron concentration, enhancing the electrical performances of ZnO thin film transistors (TFTs). It was found that 5 mol% Li doped ZnO TFT exhibited the highest photoresponsivity of 20.75 A/W and 142.11 A/W under 520 and 405 nm illumination, respectively. Also, electrical properties such as electron mobility of 11.34 cm2/V·s, on-off current ratio of 1.15 × 107 were obtained. Our result suggests a useful method for fabricating visible-light ZnO phototransistor ZnO via Li doping. |
| 저자 |
정준형, 박성호, 김병준, 허수빈, 김태연, 신재승, 마진현, 김민지, 강성준
|
| 소속 |
경희대 |
| 키워드 |
Phototransistor; Li doped ZnO; Solution process; Visible detection
|
| E-Mail |
|
