| 초록 |
Recently, studies have been conducted to improve properties by doping a transition metal oxides (TMOs) with a metal. In this study, by doping Li (5, 10 and 15 mol%) into V2O5, we demonstrated an easily prepared, solution-processable hole injection material used as hole injection layer (HIL) for quantum-dot light-emitting diodes (QLEDs). Through UV-vis spectroscopy of the V2O5 thin film, it was found that the band gap decreased during Li doping, while the Urbach energy increased. An effective hole injection properties of HIL was confirmed through hole-only devices. Using photoelectron spectroscopy, we analyzed the origin of the electrical conductivity enhancement of Li-doped V2O5 thin films. As a result, the performance of QLED with Li (10%) doped V2O5 HIL increased by 140% compared to pristine V2O5. The results imply the feasibility of a high-performance QLEDs with a Li-doped V2O5 as hole injection layer. |
