| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Effect of water-contact on the roughness of patterned photoresist investigated by AFM analysis |
| 초록 | Immersion lithography is the one of the most powerful process to reduce the size of nano-devices in recent semiconductor industry. Immersing photoresist in water, however, has many kinds of physical problems to solve: specifically the penetration of water into film. To investigate the effect of water-contact on the roughness of patterned photoresist, so called LER (Line Edge Roughness), AFM images of patterned photoresists which have been contacted with distilled water for a specific time were analyzed. Both the surface and the line edge roughness increased as contact time with water increased, and its trend shows a saturation curve. Since the roughness of film strongly depends on the PEB(Post Exposure Bake) process and remaining water in film, the LER after PEB process could represent amount of water in film after water contact. And these results mean that the physical contact of water and polymer should be understood by the aspects of diffusion kinetics, and guide how the photoresist material and post-exposure process should be arranged to prevent pattern-collapse or other problems. |
| 저자 | 안성일1, 김재현2, 진왕철1 |
| 소속 | 1포항공과대, 2삼성전자 |
| 키워드 | immersion; lithography; photoresist; thin film; LER |
