| 학회 |
한국고분자학회 |
| 학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
| 권호 |
31권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
The Investigation of Defect Generation by Water Droplet on the Chemically Amplified Photoresist |
| 초록 |
One of the major issues in immersion lithography is occurrence of the defect formed by water droplet remained on the photoresist. The objective of this study is to relate the morphological changes on the surface to the hydrophobicity of photoresist. The photoresist was prepared by mixing poly(n-alkyl methacrylate) (PnAMA) and triphenylsulfonium triflate (TPST) as a matrix and a photo acid generator respectively. The hydrophobicity of photoresist was controlled by the change of length of alkyl group, and investigated by contact angle measurement. The morphological changes of the surface were investigated by optical microscopy and atomic force microscopy. The ring stains were formed by evaporation of water droplet and many contaminants were found inside the ring stains. TPST was dissolved out through the matrix and in the crystalline state. The dissolved amount of TPST depended on the hydrophobicity of matrix and the fraction of TPST in the photoresist. |
| 저자 |
김정훈1, 안성일1, 김재현2, 진왕철1
|
| 소속 |
1포항공과대, 2삼성전자 |
| 키워드 |
Immersion lithography; Photoresist; Defect; Hydrophobicity
|
| E-Mail |
|
