| 학회 | 한국공업화학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 | 25권 1호 |
| 발표분야 | 포스터-디스플레이 |
| 제목 | Effect of Substrate Bias on SiNx PECVD Process |
| 초록 | Currently, OLED device types are changing from flat to flexible and rollable, so it is important to prevent moisture permeation. In this study, the SiNx thin film used for TFE was Deposited on a wafer with PECVD. which is using a CCP(13.56MHz) on the upper electrode and the RF bias(2MHz) electrode on the bottom, by change of the rf bias power and the composition ratio and density of the film were measured by XPS and XRR. Increasing the RF bias power tends to increase the density of the film compared to conventional PECVD process. Therefore, by applying RF bias power it proposed a method of controlling the density of the film. Through this process, a high-density thin film is deposits, which is expected to show better moisture permeation prevention performance. In addition, it is expected that it can be applied to the SiON and SiO2 thin films by controlling the process gas and, also to the PECVD process of semiconductors by increasing the temperature. |
| 저자 | 안세진, 조성민 |
| 소속 | 성균관대 |
| 키워드 | PECVD; Silicon Nitride; Encapsulation; Thin Film |
