| 초록 |
Here, structure tunable synthesis of transition metal dichalcogenide (e.g. MoS2, WS2) is suggested by combination of evaporation-induced self-assembly method and thermal decomposition. The novel approach provide specific control of micro-structure of MoS2 such as thickness, shape and inter spacing by tuning concentration and evaporation speed of solution during dip coating process, which enable well aligned MoS2 ribbon array. The structural characterization of MoS2 ribbon were carried out by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. As a practical application, semi-transparent MoS2 field effect transistor was fabricated using graphene electrode on plastic substrate. Results of electrical characterization indicated excellent performance, with a field effect mobility of 45 cm2/Vs, subthreshold voltage of 194 mV/dec and on/off ratios > 104. In addition, the hybrid devices revealed stable electric property and bending configuration, an important feature essential for flexible electronic systems. [1] K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, and A. Geim, Proc. Natl. Acad. Sci. U.S.A., 102, 10451 (2005). [2] C. Dean, L. Wang, P. Maher, C. Forsythe, F. Ghahari, Y. Gao, J. Katoch, M. Ishigami, P. Moon, M. Koshino, T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, and P. Kim, Nature, 497, 598 (2013). [3] M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, Nat. Chem., 5, 263 (2013). |
