| 초록 |
Nanoimprint lithography (NIL) is the one of the promising nanolithographic techniques due to its low cost, simple process, and great precision. We propose novel hybrid resists containing diazoketo groups for high performance of the UV-NIL process. Polyhedral oligomeric silsesquioxane which induces high thermal stability and good mechanical property is modified with diazoketo derivatives for photosensitivity. The obtained hybrid resists possess a variety of characteristics desirable for UV-NIL, such as high sensitivity, low volumetric shrinkage, good release property, and excellent dry-etch resistance. In addition, the photo-polymerization can be performed by UV irradiation under an ambient air condition without any additives. Based on these characteristics, the resist was optimized for the UV-NIL evaluation |
