| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Characteristics of Vertical Organic Transistors with Nano-Patterned Gate using Monodispersed Colloidal Spheres and Block Copolymer |
| 초록 |
We have fabricated vertical organic transistors consisting of nano patterned gate using self-assembly of block copolymer and studied on device characteristics. The gate opening size of device made by new method was 30 ~ 40 nm. The device was compared with that having 200 nm opening size gates which is fabricated using monodispersed colloidal polystyrene spheres. The device using block copolymer showed improved performance in terms of on-off ratio. We have also fabricated transistors with tungsten oxide buffer layer to increase the on current of the device. The devices were investigated from the measurements of current-voltage characteristics and impedance spectroscopy and atomic force microscope (AFM) and scanning electron microscope (SEM) images. |
| 저자 |
윤석민, 윤종선, 오세용
|
| 소속 |
서강대 |
| 키워드 |
Polystyrene spheres; Block copolymer; Vertical organic transistor
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| E-Mail |
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