| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Solution-processed High Performance Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing |
| 초록 |
Herein, we report are simple and high oxidizing rate fabrication for solution based mix compound (IZO, IGZO) metal oxide semiconductors (MOSs) film. One of issue for solution based MOSs film fabrication how to well oxidizing precursor component for high performance MOSs film. Because solution base process comparably oxidizing rate lower then vacuum deposition processed. Consequently solution processed MOSs shows low devices performance. We propose precursor film exposed to water by supply saturated water vapor in closed area for increase oxidizing efficiency, except any oxidizing agent. Therefore water vapor exposed MOSs film hydroxide rate lower than not exposed one (≤ 18%). Finally, we have successfully fabricate high electron mobility (27.9 cm2 / (V·s)) MOSs film and build up raid oxidizing fabrication process (400 °C annealing 5 min) even lower then long annealing processed(400 °C annealing 1hr) MOSs film (19.2 cm2 / (V·s)). |
| 저자 |
박원태1, 손인영2, Yong Xu1, 김동윤1, 신을룡1, 이태권2, 노용영1
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| 소속 |
1동국대, 2삼성디스플레이 |
| 키워드 |
Metal oxide seminconductor; field effect transistor; printed electronics
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| E-Mail |
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