| 학회 |
한국화학공학회 |
| 학술대회 |
2008년 가을 (10/23 ~ 10/24, 부산 BEXCO) |
| 권호 |
14권 2호, p.3369 |
| 발표분야 |
재료 |
| 제목 |
IZO(In2O3-ZnO) Thin Film deposition by continuous Flow Micro Reactor |
| 초록 |
In this paper, we have prepared n-type transparent IZO (In2O3-ZnO) thin films through continuous Flow Reactor Process(CFR) which has a control system of flux of precursors and reaction temperatures. In order to apply IZO thin films for the fabrication of Flexible display devices, we have investigated annealing processes including normal air annealing and wet annealing processes under the different conditions. The structural, optical and electrical properties of the obtained IZO thin films have been characterized, respectively. The IZO thin film showed suitable performance for thin film transistor device (TFT). |
| 저자 |
배은진1, 이두형1, 류시옥1, 이태진1, 강진규2, 김대환2
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| 소속 |
1영남대, 2DGIST |
| 키워드 |
IZO; thin film; continuous Flow Micro Reactor
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| E-Mail |
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| 원문파일 |
초록 보기 |
