| 초록 |
Large-area monolayer graphene can be synthesized by chemical vapor deposition (CVD) on catalytic copper metal surface. However, the graphene from CVD method usually shows inferior properties as compared to theoretical value of perfect graphene without any structural defects including point defects and grain boundaries. It is widely accepted that the presence of grain boundaries in graphene can lower its outstanding physical properties. In this regard, the synthesis of high-quality graphene (close to single crystal graphene monolayer) has been extensively studied. Likewise, we have prepared a high-quality, large-area graphene with a high carrier mobility of ~12,000 cm2/Vs by using well-oriented copper foil and improved CVD method. Such graphene has still lots of point defects, but no grain boundaries which help improve the quality CVD graphene. |
