| 초록 |
Among various semiconductor materials, InSb is attracting attention as a low bandgap of about 0.17 eV. In this study, the characteristics of InSb doped with Bismuth were verified through the DFT calculation. As a result of deriving the band structure of each system by increasing the substitution ratio of Bi to the 2×2×2 InSb supercell, it was found that the addition of Bi significantly changed the intrinsic electronic properties of InSb. As the Bi content increased, the bandgap decreased, and the heavy hole-light hole interaction and split-off energy also decreased. It was found that the degree of change was conspicuous at a specific point, this was demonstrated by the fact that the singularity of the effective mass calculated from the band curvature appeared at about 6%. This suggests that InSbBi doped with Bismuth about 6% is in the process of being converted from a crystal structure as a semiconductor(F-43m) to a completely different crystal structure of a semi-metal(P4/nmmS). By predicting the change in semiconductor properties due to metal substitution by DFT calculation, the potential that InSbBi can be used in various electronic devices could be demonstrated. |
