| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | AlGaN/GaN 이종접합구조의 Al 함량에 따른 I-V 특성. |
| 초록 | The AlXGaN(1-X)/GaN structures were fabricated by metal-organic chemical vapor deposition. GaN-based high electron mobility transistors (HEMTs) are excellent candidates for high power and high frequency applications at elevated temperatures. This potential is due to the advantageous material properties such as wide band gap leading to high breakdown voltage, high saturated-electron drift velocity, and the existence of AlGaN/GaN hetero-structure with high conduction band offset and high piezoelectricity. Recently, tremendous progress has been recorded in the material quality and device processing of GaN-based HEMTs. The nature of tensile strain AlGaN layer, however, tends to defects or cracks which severely deteriorate the operating properties of the devices. To avoid cracks formation, many activities have stressed upon low Al content AlXGa(1-X)N films to minimize the mismatch between AlGaN and GaN with only limited efforts on the study of high Al content AlXGaN(1-X) films and related hetero-structures. |
| 저자 | 박현규, 진정근, 연대흠, 최재홍, 권영석, 이종한, 변동진 |
| 소속 | 고려대 |
| 키워드 | MOCVD; AlGaN; GaN |
