| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
High-performance Stable N-type Indenofluorenedione Field-Effect Transistors |
| 초록 |
We developed high-performance stable n-type OFETs using indenofluorenediones with different numbers of fluorine substituents. Top-contact OFETs were fabricated by vacuum deposition of indenofluorenediones as the semiconducting channel material on polystyrene-treated SiO2/Sisubstrates. TriF-IF-dione FETs with Au source/drain contacts exhibited good device performances, with a field-effect mobility of 0.16 cm2/Vs, an on/off current ratio of 106, and a threshold voltage of 9.2V. We found that the electrical stability for OFETs based on indenofluorenedione improved with the number of fluorine substituents, which was attributed to higher activation energies for charge trap creation. Moreover, the TriF-IF-dione FETs yielded excellent environmental stability properties because the LUMO levels were relatively low compared with those of the MonoF-IF-dione FETs. |
| 저자 |
이중석1, 박영일2, 김범준1, 김범진3, 박종욱3, 조정호1
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| 소속 |
1숭실대, 2가톨리대, 3가톨릭대 |
| 키워드 |
n-type organic field effect transistors; air stable
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| E-Mail |
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