| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Crystalline Nanostructure and Morphology of Tri-IF-dione for High-performance Stable N-type Field-Effect Transistors |
| 초록 |
The device performance and stability of n-type OFET based on hexafluoro-indeno-fluorene-dione were investigated. The electrical characteristics of TriF-IF-dione FETs were optimized by controlling the dielectric surface properties via insertion of organic interlayers, such as SAMs or polymeric layers at the semiconductor/SiO2 dielectrics interfaces. In particular, a thin PS layer surface provided a device that performed well. The improvements in the performance of TriF-IF-dione OFET conveyed by the PS interlayers were examined in terms of the crystalline nanostructure and charge modulation effects in the channel. These properties were correlated with, respectively, the hydrophobicity and the electron-donating characteristics. The TriF-IF-dione FETs with a PS interlayer showed excellent electrical stability attributed to high activation energies for charge trap creation. A complementary inverter comprising both pentacene and TriF-IF-dione was successfully demonstrated. |
| 저자 |
이중석1, 박영일2, 이동렬1, 김도환1, 오세용3, 박종욱2, 조정호4
|
| 소속 |
1숭실대, 2가톨릭대, 3서강대, 4성균관대 |
| 키워드 |
1; 2; 3; 7; 8; 9-hexafluoro-indeno[1; 2-b]fluorene-6; 12-dione (TriF-IF-dione); n-type field-effect transistors (FETs); surface energy; charge density; electrical stability
|
| E-Mail |
|
