| 초록 |
Since the publication of the seminal paper by Nomura, et al. in 2004, the amorphous oxide-based semiconductor materials has emerged as a strong candidate to be the backplane technology for next-generation LCD and OLED panels. They offer high mobility and excellent uniformity for a large area, compared with conventional Si based TFTs. In addition, oxide semiconductor TFTs fabricated on a flexible polymer substrate have also been reported by many research groups. Because the deposition of oxide semiconductors does not require a high temperature process, typically via sputtering at room temperature, device performances comparable to a substrate on glass are achievable on a flexible substrate. However, recently some researchers make an approach to decrease the maximum process temperature. Therefore, the last part will present a new approach which atomic layer deposition combined with plasma treatment. |
