| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Resistive random-access memory (ReRAM) devices based on quasi 2D halide perovskites for high ON/OFF ratio and long-term stability |
| 초록 | Resistive random-access memory (ReRAM) devices based halide perovskites are emerging as revolutionary data storage devices due to their switching materials (halide perovskites) received considerable attention in recent years. Among the electrical characteristics of halide perovskites, its current–voltage (I-V) hysteresis, which may occur because of defect migration, makes ReRAM employ halide perovskites as switching materials. In general, the halide perovskite means a 3-dimensional (3D) crystal structure with the general formula ABX3, where a monovalent A+ cation, a divalent B2+ cation, and the 1− charge of the X halide anion. In the resistive switching process, conductive filaments in the 3D halide perovskite show repeatable formation and rupture. However, as a switching material, the morphology of the 3D halide perovskite film is not uniform, and the ON/OFF ratio of the memory device is low. To overcome these challenges, quasi 2-dimensional (2D) halide perovskites can be applied to the resistive memory devices. The quasi 2D halide perovskite structure formed by inserting into large molecule at A sites in a 3D perovskite structure, which means the 3D structures are broken, and become quasi 2D structures. Herein, we apply quasi 2D halide perovskite in resistive switching memory devices by inserting phenylethyl ammonium (PEA) into 3D halide perovskite structure, and the device structure is Ag/ quasi 2D halide perovskite/Pt/Ti/SiO2/Si stack. The morphology of the film is enhanced, and the resistive switching memory devices exhibit the higher ON/OFF ratio, compared with those of the 3D perovskite based devices. Also, the air stability is improved. This research will contribute to the improvement of switching behavior of memory devices and the better understanding on the resistive switching mechanisms based on the quasi 2D halide perovskites. |
| 저자 | 김효정, 장호원 |
| 소속 | 서울대 |
| 키워드 | 3D halide perovskites; quasi 2D halide perovskite; phenylethyl ammonium; ON/OFF ratio; long-term stability |
