| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Advanced Metallization of Contact Fill Tungsten Thin Film Process with Controllable Growth System |
| 초록 | It is becoming an essential technique to achieve the gap-fill of tungsten metal thin films for the fabrication of sub-10 nm semiconductor devices. Seams and voids are commonly observed in the conventional tungsten chemical vapor deposition method due to difference in deposition rates inside wall of holes. For the successful gap-fill of tungsten, the control of deposition rates inside wall of holes is very critical. For the gap-fill tungsten, controlling deposition rate in the hole and line patterning each part is considered. In this study, we introduce a controllable growth system to improve the gap fill capability by adjusting deposition rates in the sidewalls. As a result, we achieved successful gap-fill of tungsten metal thin film with reduced seams and voids, on the trench substrate with 27:1 aspect ratio. Prepared films were characterized by high-resolution transmission electron microscopy, X-ray fluorescence and resistivity probe. |
| 저자 | 김태성, 최석규, 박홍기, 선우훈, 김동우, 박진우, 권주연, 이건정, 윤원준, 전진호 |
| 소속 | 원익아이피에스 |
| 키워드 | gap-fill; tungsten; seamless; void and seam; metallization |
