| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
OLED 소재 및 소자기술 동향(분자전자 부문위원회) |
| 제목 |
Silsesquioxane dielectrics for organic thin film transistors and spin-coated CdS semiconductor thin films |
| 초록 |
Silsesquioxane thin films are strong candidates as dielectric thin films for various electronic applications. Their dielectric constant values are thought to be partially due to Si-OH groups inside the films which is understood in terms of electronic, ionic, and orientational polarizations using Debye equation. Distinct clockwise capacitance-voltage (C-V) hysteresis in aminopropyl-silsesquioxane thin films is originated from amphoteric charge trap behavior due to the coexistence of N(Si≡)2 and E’ centers. 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane monomers were used for synthesis of ethylene-bridged copolymer owing to condensation polymerization. we have investigated a new solution-processed approach to the synthesis of semiconducting CdS films for use in TFT devices, exhibiting n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ~ 48 cm2V-1s-1) and low voltage operation (< 5 V). |
| 저자 |
정현담 |
| 소속 |
전남대 |
| 키워드 |
Silsesquioxane; dielectrics; OTFT; Debye equation; C-V hysteresis; CdS
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| E-Mail |
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