| 초록 |
Ferroelectric-gate field effect transistors (Fe-FETs) in particular with ferroelectric polymer layers as gate insulators have received attention due to their benefits, including a nondestructive readout capability, scalable feature size of 4F2, and low operating voltages. Here, we report on the realization of non-volatile ferroelectric thin film transistor memory with dual operation modes. The solution-processed devices exhibited p-type as well as n-type current hysteresis which arose from electronic band modulation of our semiconductor dependent upon processing temperature on a ferroelectric insulator. In both switching modes, the memory device showed great stability to the ambient environment with excellent data retention and endurance of more than 105 seconds and 102 cycles, respectively. |
