| 초록 |
The ultra-thin film deposition and fine patterning processes have been investigated for next generation technologies of semiconductor industry. Area selective atomic layer deposition (AS-ALD) is one of the future technologies. It is a kind of ALD where thin layer is deposited selectively on substrate with reactive functional group only by chemical adsorption. In this study, we carried out investigation of AS-ALD of Al2O3 using SAMs. Trimethylaluminium (TMA) and water were used as precursor and oxidant, respectively. Octadecyltrichlorosilane (OTS) and Perfluorooctyltrichlorosilane(FOTS) were used as SAMs for blocking deposition of Al2O3. However, SAMs cannot block deposition permanently because TMA is physically adsorbed. These absorbed TMA become nucleation site on passivation layers for deposition of Al2O3. To block deposition of Al2O3, materials and methods of SAMs for passivation were selected and process conditions were found. In this study, high pressure argon purge can be used to remove physically deposited TMA molecules. Also, lower TMA pressure and higher temperature also increase selectivity. Wetting property of SAM and TMA adsorption were evaluated by water contact angle. |
