| 초록 |
We report the mechanical and electrical characteristics of the backside metal with a 1stAg/Sn/2ndAg solder layer for application to a commercial semiconductor product. After the die attach process, Cu6Sn5, Cu3Sn and Ag3Sn intermetallic compounds were formed on the interface between a Si chip and Cu-plated Alloy 42 lead frame without pure Sn and Ag layers. In addition, the highest shear strength is 27.4 MPa when the 1stAg/Sn/2ndAg thicknesses were 300 nm, 1800 nm, and 150 nm, respectively. Electrical characteristics of the bonding interface satisfy the requirement specification of the commercial product. |
