| 초록 |
ZnO nanorods for optoelectronic and electronic devices has more superior properties than the thin film or particles due to intrinsically dislocation free and a highly-faceted single crystal domain. To fabricate the devices, reliable n- or p-type doping of the ZnO nanorods is a critical process. Arsenic is a promising doping element for p-type ZnO because it can form the AsZn-2VZn defect as an acceptor. In this study, we report the effect on arsenic implantation into the ZnO nanorods and their rapid thermal annealing to active the implanted arsenic. Structural defects of the ZnO nanorods after the implantation were restored by using suitable annealing conditions depending on the ion doses. The morphologies of arsenic-implanted ZnO nanorods were varied according to the annealing time. At low-temperature (13 K) photoluminescence spectra, a sharp peak at 3.357 eV and a broad peak at 2.3–2.7 eV appeared after annealing, these peaks maybe caused by the implanted arsenic elements. |
