| 초록 |
In this study, we have demonstrated a novel organic−inorganic hybrid gate dielectric material. Crosslinked organic−inorganic hybrid thin films are readily fabricated by spin-coating a zirconium chloride precursor and diacrylate cross-linker solution, followed by radiation of UV. These hybrid dielectrics exhibit excellent insulating properties, high capacitance and great surface properties. The organic thin-film transistor with these hybrid gate dielectrics showed excellent field effect mobility, high on/off ratio and low threshold voltage. |
