| 학회 |
한국공업화학회 |
| 학술대회 |
2017년 가을 (11/08 ~ 11/10, 부산 벡스코(BEXCO)) |
| 권호 |
21권 2호 |
| 발표분야 |
무기재료_포스터 |
| 제목 |
Facile and Low-temperature, Solution-Processable Polymer Gate Dielectric for Thin Film Transistors |
| 초록 |
We demonstrate polymer gate dielectric material for cross-linking method. These film are fabricated via solution processes and had a low gate leakage current density(~10-6A/cm2). It had a high capacitance (30nF/ cm2) than silicon oxide. Also, These film had simple and low temperature fabrication procedure. These film preferred Thin-film transistors(TFTs) fabricated bottom contact top gate structure using organic semiconductors and inorganic semiconductors. These devices exhibit improvement of carrier mobility and on/off ratio. |
| 저자 |
김대철, 하영근
|
| 소속 |
경기대 |
| 키워드 |
polymer; dielectric; transistor
|
| E-Mail |
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