| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 가을 (10/11 ~ 10/13, 제주컨벤션센터) |
| 권호 |
42권 2호 |
| 발표분야 |
고분자가공/복합재료 |
| 제목 |
Effects of atomic-level selenium doping on defected graphene nanosheets |
| 초록 |
In this study, we report the effects of atomic-level selenium doping in reduced graphene oxide (rGO). Using first-principles calculations, we found that selenium atoms could be selectively bonded in particular locations, such as the pseudo-edge sites of hole-cluster defects in the basal plane and edge defect sites of graphene, while the intrinsic topological defects of the basal plane were unfavorable for bonding. Numerous selenium atoms were introduced on the fully amorphorized rGO surface, inducing a dramatic change of its electrical transport properties by electron doping. The large metallic regions formed by the selenium atoms on rGOs led to the enhancement of electrical conductivity by 210 S cm–1 at 300 K. Moreover, the temperature-dependent conductivities (σ)/σ20K of selenium-doped rGOs were almost constant in the temperature range of 20–300 K, indicating that their carrier mobility becomes temperature independent after selenium doping, similar to that of pure graphene. |
| 저자 |
현종찬, 곽진환, 김하영, 엄정주, 홍연경, 윤영수
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| 소속 |
강원대 |
| 키워드 |
Graphene; Anode; Lithium-ion battery; Li-air battery; Selenium; Doping
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| E-Mail |
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