| 초록 |
Organic nonvolatile memory have attracted great attention worldwide because of their role in the management and storage of electrical information in the wearable, flexible electronics. Several memory technologies, including nano-floating gates, polymer electret, and polarizable ferroelectric materials, were reported. However, these approaches required to add an extra chargeable layer or embed an extra conductor in the dielectric layer. This not only enhance the complexity and cost of the device fabrications, but also potentially leads the relaxation of the trapped charges and the increase of current leakage due to the embedded extra conductor. To simplify the process and device structures, we demonstrated a doped polymer system for organic non-volatile memory. We added the n-type dopant, 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) into the p-channel conjugated polymer, poly(tetrathienacene-diketopyrrolopyrrole) (PTDPPTFT4). The dopant tends to form radical anions and provides electrons to the LUMO level of the PTDPPTFT4, thus leading to the enhanced electron transport and memory effects.The memory performance of the doped polymer devices showed the significant improvement. The large memory windows (more than 40 V) and high trapped charge density (2.94×1012 cm-2) can be achieved. Similar enhancement can be also observable in the common p-type conjugate polymers (e.g. P3HT, PBTTT, PII2T). This indicates that the combination of n-type dopant and conjugated polymer open a new approach toward high performance non-volatile organic memory. |
