학회 |
한국재료학회 |
학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
권호 |
18권 1호 |
발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
제목 |
Parametric impedance analysis of ZnO bicrystals by admittance spectroscopy |
초록 |
With the dc resistance subtracted admittance spectroscopy has been successfully applied to the Schottky barrier of a Pr-doped ZnO bicrystalline interface for the deep level identification [1]. Yet the admittance behavior deviates from that of the ideal RC equivalent circuits for the trapping at the deep levels due to the distribution of the time constants which may originate from the broadening of the deep levels or the Fermi level pinning by the high trap concentration. This work suggests a parametric analysis of the impedance of the Schottky barrier using the equivalent circuit where the resistor components are replaced by the constant phase elements to address the deviation from the ideality. The analysis can evaluate the deep level parameters more accurately and systematically even from the small number of impedance data in contrast to the temperature curve analysis in admittance spectroscopy. ZnO C-|C- bicrystals doped with transition metals of Co and/or Mn and Bi or Pr were investigated. |
저자 |
Chang-Gyun Park1, Pyung-An Ahn2, Eui-Chol Shin1, jong-sook LEE2
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소속 |
1School of Materials Science and Engineering, 2Chonnam National Univ. |
키워드 |
admittance spectroscopy; deep level parameters; schottky barrier; ZnO bicrystal
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E-Mail |
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