| 학회 |
한국화학공학회 |
| 학술대회 |
2007년 가을 (10/26 ~ 10/27, 한국과학기술원) |
| 권호 |
13권 2호, p.2359 |
| 발표분야 |
재료 |
| 제목 |
Selective Area Growth of 1D ZnO Nanostructures via Expedient Solution Method for Field Emission Device Applications |
| 초록 |
We demonstrate a low cost and novel solution method for selective area growth of well-aligned ZnO nanorod arrays on pre-patterned ZnO/Si substrates. Conventional photolithography and electron beam lithography were used to develop patterns. Field emission scanning electron microscopy analysis revealed that the nanorods are well aligned and perfectly grown on the selected area. The room temperature photoluminescence spectrum shows a strong ultra violet emission at 381 nm and a broad deep level visible emission at 580 nm. The device performance of the ZnO nanostructures was also studied at room temperature. Field emission current density (J) versus macroscopic field (E) curves of selectively grown ZnO nanorods on (square shaped) ZnO/Si substrates with an anode sample separation of 150 µm were measured. The β value is found to be 1.68 × 10-3. Finally, the emission current density of our sample can be as high as 0.052 mA/cm2 at the field of 3.2 V/µm and the turn-on field of our sample is about 2.85 V/µm that is defined as the field where the emission current density can be districted from the background noise. |
| 저자 |
Ahsanulhaq, 김진환, 김상훈, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
ZnO nanorods; selective area growth; optical and field emission properties
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| E-Mail |
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| 원문파일 |
초록 보기 |
