| 초록 |
Photovoltaic technology using Cu2ZnSn(S,Se)4(CZTSSe) as an absorber layer is widely used because it shows a useful bandgap energy range of 1.0 to 1.5 eV and an absorption coefficient of higher than 104cm-1. CZTSSe solar cells consist of various thin-film stacks, which include Mo, CZTSSe absorber, CdS, intrinsic ZnO (i-ZnO), Al doped ZnO (AZO), and Au electrode. Zinc oxide (i-ZnO) is an oxide semiconductor with a wide bandgap and can be doped with several elements such as Al or B. Especially, AZO is widely studied as a transparent conducting electrode in optical sensors, solar cells, and flat panel displays. Furthermore, Al doped ZnO is non-toxic, abundance in nature and also shows good chemical stability against hydrogen plasma. Therefore, it is a potential and suitable candidate for photovoltaic applications. In this study, Al doped ZnO layer was deposited by RF magnetron sputtering method with ZnO:Al (2wt.%) target on CdS/CZTSSe solar cell. We controlled deposition temperature from 200℃ to 400℃. The influence of deposition temperature was investigated on the basis of the comparison between the performances of CZTSSe solar cells. Finally, the optimize deposition temperature was achieved. |
