| 초록 |
In this study, we have investigated the electrical, structural, and optical properties of Al-doped ZnO (AZO) thin films of ~ 50 nm thickness grown by atomic layer deposition (ALD) on glass substrates at 200 ℃. The electrical properties of ZnO thin film were improved after H2O pre-deposition process. The Al doping concentrations were controlled by inserting an Al2O3 cycle after every “n” ZnO cycles, varying n from 99 to 16. As the doping concentration increases, the resistivity decreases and the optical band gap increased. When Al2O3 cycle ratio is 5%, the electrical resistivity showed the lowest value of 4.76 x 10-3 Ω cm, with the carrier concentration of 1.10 x 1020 cm-3 and optical transmittance over 90 % was obtained in the visible region. And the thin film was strongly textured along the (100) direction in the X-ray diffraction patterns. |
