| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | The properties of CBRAM by the thickness and heat treatment temperature of the ZrO2 |
| 초록 | Recently, the need to use new materials and new element structures are suggested to make charge-storage memory elements which have their feature size below 20nm. Conductive Bridging Random Access Memory(CBRAM) is one of the solutions. CBRAM devices are non-volatile, have low power consumption, fast response times and good prospects compared with existing memories for scalability down. In this paper, we used CBRAM with a bottom electrode consisting of TiN and a top electrode consisting of CuTe. We investigated the characteristics of thickness–the thickness of the ZrO2 varies 5nm, 10nm, 15nm- and also investigated the characteristics of heat treatment using the thickness of 5nm varies a non-heat-treated, 200℃, 400℃ and 600℃. According to such experiments, we could confirm that each forming voltage and set voltage are different and there are distinction between operation characteristics of each element. Consequentially, we determined the most suitable thickness of ZrO2 and temperature of heat treatment. |
| 저자 | Hyun-ji Kim, Eun-ji Lee, Jea-gun Park |
| 소속 | 한양대 |
| 키워드 | CBRAM; ZrO<SUB>2</SUB>; thickness of oxide; heat treatment |
