| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 봄 (04/10 ~ 04/12, 부산컨벤션센터(BEXCO)) |
| 권호 |
44권 1호 |
| 발표분야 |
고분자합성 |
| 제목 |
Preparation and Characterization of a Novel Polyimide/Surface Modified TiO2 Nanocomposite for Solution Processable High k Dielectric |
| 초록 |
For high performance organic thin film transistors (OTFTs), OTFT require dielectrics having a high dielectric constant and enhanced mechanical stability. We report on a novel polymer nanocomposite dielectric based on (3-aminopropyl)triethoxysilane (APTES) functionalized titanium dioxide (TiO2) nanoparticle as a dopant in crosslinkable polyimide (PI). Polyimide (DOCDA-6FHAB) was synthesized using the monomers, DOCDA and 6FHAB. And then, we introduced the TiO2 nanoparticle to make a high dielectric constant polyimide nanocomposite dielectric. Surface of TiO2 was modified APTES. Crosslinked DOCDA-6FHAB was capping layer. Polyimide nanocomposite bilayer film showed high dielectric constant (5.51) and low leakage current density (10-7A/cm2) in metal-insulator-metal (MIM) devices. Detailed synthetic routes of polyimide and nanocomposite film fabrication condition will be presented. |
| 저자 |
김경민1, 안택1, 김윤호2
|
| 소속 |
1경성대, 2한국화학(연) |
| 키워드 |
OTFT; gate insulator; high-k; nanocomposite
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| E-Mail |
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