| 초록 |
A stoichiometric mixture for CdIn2Te4 single crystal was prepared from horizontal electric furnace. The CdIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements.. The (001) growth plane of oriented CdIn2Te4 single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of CdIn2Te4 single crystal measured with Hall effect by van der Pauw method are 8.61×1016 cm-3 and 242 cm2/V-s at 293K, respectively. The temperature dependence of the energy band gap of the CdIn2Te4 single crystal obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.4750 eV - (7.69× 10-3 eV)T2/(T+2147). After the as-grown CdIn2Te4 single crystal was annealed in Cd-, In-, and Te-atmospheres, the origin of point defects of CdIn2Te4 single crystal has been investigated by the photoluminescence(PL) at 10 K. The native defects of VTe,, Cdint, and VCd, Teint obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cd-atmosphere converted CdIn2Te4 single crystal to an optical n-type. Also, we confirmed that In in CdIn2Te4 did not form the native defects because In in CdIn2Te4 single crystal existed in the form of stable bonds. |
