| 학회 |
한국재료학회 |
| 학술대회 |
2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트) |
| 권호 |
18권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Contact behavior of Ag metal on boron emitter in n-type crystalline silicon solar cells |
| 초록 |
Boron rich layer (BRL) is unintentionally formed after boron diffusion process. The BRL commonly has to be removed due to defects in this layer. However, it has been reported that BRL has better electrical conductivity than boron emitter. In this study, we investigated contact properties of Ag metal on boron emitter with and without BRL. Boron emitter was formed with BBr3 in furnace. BRL was removed by wet chemical etching. To confirm electrical properties, contact resistance (ρc) and emitter saturation current (Joe) were measured. SEM images also displayed to confirm the effect of contact properties with and without BRL. As a result, BRL has better contact properties than boron emitter, whereas, BRL has worse passivation properties. We propose selective BRL formation which has BRL under contact regions. |
| 저자 |
김찬석, 박성은, 김영도, 박효민, 김성탁, 김현호, 탁성주, 김동환
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| 소속 |
고려대 |
| 키워드 |
n-type wafer; boron emitter; boron rich layer
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| E-Mail |
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